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SMD Type
Silicon PNP Epitaxial Planar Type 2SB1169A
TO-252
+0.15 1.50 -0.15
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
High forward current transfer ratio hFE which has satisfactory linearity. Low collector-emitter saturation voltage VCE(sat).
+0.2 9.70 -0.2
6.50 +0.2 5.30-0.2
+0.15 -0.15
+0.1 0.80-0.1
+0.15 0.50 -0.15
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.60-0.1
+0.28 1.50 -0.1
+0.25 2.65 -0.1
+0.15 5.55 -0.15
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -80 -80 -5 -1 -2 1.3 150 -55 to +150 Unit V V V A A W
Electrical Characteristics Ta = 25
Parameter Collector-emitter voltage Base to emitter voltage Collector-emitter cutoff curent Collector-emitter cutoff curent Emitter-base cutoff current Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol VCEO VBE ICES ICEO IEBO hFE Testconditons IC = -30 mA, IB = 0 VCE = -4 V, IC = -1 A VCE = -80 V,VBE = 0 VCE = -60 V,IB = 0 VEB = -5 V, IC = 0 VCE = -4 V, IC = -0.2 A VCE = -4 V, IC = -1 A VCE(sat) IC = -1 A, IB = -0.125 A fT ton tstg tf IC = -1 A,IB1 = -50 mA,IB2 = 50 mA, VCC = -50 V VCE = -10 V, IC = -0.5 A , f = 10 MHz 40 0.5 1.2 0.3 40 15 -1 V MHz is is is Min -80 -1.3 -200 -300 -1 450 Typ Max Unit V V iA iA mA V
hFE Classification
Rank hFE 40 R 90 Q 70 150 P 120 250 O 200 450
3.80
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